SQ4850EY-T1-GE3【PDF 1/10 页】MOSFET N-CH D-S 60V 8SOIC

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Sheet目录518

[1页]2页 3页 4页 5页

SQ4850EY

www.vishay.com

Vishay Siliconix

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

V DS (V)

R DS(on) ( ? ) at V GS = 10 V

R DS(on) ( ? ) at V GS = 4.5 V

I D (A)

Configuration

0.022

0.031

Single

FEATURES

? TrenchFET ? Power MOSFET

? AEC-Q101 Qualified

? 100 % R g and UIS Tested

? Material categorization: ?

For definitions of compliance please see

www.vishay.com/doc?99912

SO-8

Top View

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SO-8

SQ4850EY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V DS

V GS

LIMIT

± 20

UNIT

Continuous Drain Current

T C = 25 °C

T C = 125 °C

I D

6.9

Continuous Source Current (Diode Conduction)

Pulsed Drain Current a

I S

I DM

6.2

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation a

Operating Junction and Storage Temperature Range

L = 0.1 mH

T C = 25 °C

T C = 125 °C

I AS

E AS

P D

T J , T stg

6.8

2.2

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

Junction-to-Foot (Drain)

PCB

Mount b

R thJA

R thJF

°C/W

Notes

a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.

b. When mounted on 1" square PCB (FR-4 material).

S12-2200-Rev. E, 24-Sep-12

Document Number: 68878

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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